Includes bibliographical references.
|Statement||editors, Bernard Gil, Roger-Louis Aulombard.|
|Contributions||Gil, B., Aulombard, R. L.|
|LC Classifications||QC611.8.C64 S35 1995|
|The Physical Object|
|Pagination||xxvi, 683 p. :|
|Number of Pages||683|
|LC Control Number||96135629|
Surveying the principles common to all types of semiconductor materials, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization is the first comprehensive, fundamental introduction to the by: Introduction to Epitaxy provides the essential information for a comprehensive upper-level graduate course treating the crystalline growth of semiconductor heterostructures. Heteroepitaxy represents the basis of advanced electronic and optoelectronic devices today and is considered one of the top fields in materials research. M. Suemitsu, S.N. Filimonov, in Silicon–Germanium (SiGe) Nanostructures, Heteroepitaxy. Heteroepitaxy is the growth of a crystalline film on a crystalline substrate of a different material. For most of the practically important combinations of materials, heteroepitaxy is associated with the build-up of elastic strain in the growing film. Silicon Heteroepitaxy • While Si is not the ideal material from an electronic and optical point of view, its abundance, ease of processing and availability of a good native oxide have made it the backbone of semiconductor industry. • Combining Si substrates with compound semiconductor films would enable higher optoelectronic functionalityFile Size: KB.
Heteroepitaxy, or the single-crystal growth of one semiconductor on another, is necessary for the development of a wide range of devices and systems. There are three motivations for semiconductor heteroepitaxy: substrate engineering, heterojunction devices, and device integration. Heteroepitaxy of Semiconductors book. Theory, Growth, and Characterization. By John E. Ayers. Surveying the principles common to all types of semiconductor materials, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization is the first comprehensive, Cited by: Heteroepitaxy is applied in the development of laser diodes, CD and DVD drives, fiber optic communication systems, high-frequency transistors, wireless communications systems, and high-brightness This book covers the theory, growth, and characterization of heteroepitaxial cubic and hexagonal semiconductors. Epitaxy is used in nanotechnology and in semiconductor fabrication. Indeed, epitaxy is the only affordable method of high quality crystal growth for many semiconductor materials. In surface science, epitaxy is used to create and study monolayer and multilayer films of adsorbed organic molecules on single crystalline surfaces.
Get this from a library! Heteroepitaxy of semiconductors: theory, growth, and characterization. [John E Ayers] -- Considered one of the top research fields in electronics materials today, heteroepitaxy of semiconductors refers to the single-crystal growth of one semiconductor on a different substrate. The. III-Nitride Semiconductors: Electrical, Structural and Defects Properties. Book • Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because. Book Description. Heteroepitaxy has evolved rapidly in recent years. With each new wave of material/substrate combinations, our understanding of how to control crystal growth becomes more refined. the author introduces the important heteroepitaxial growth methods and provides a survey of semiconductor crystal surfaces, their structures, and. The book incorporates both theoretical and experimental advances to explore the heteroepitaxy of tuned functional oxides and semiconductors to identify material, device and characterization challenges, and to present the incredible potential in the realization of multifunctional devices and monolithic integration of materials and devices.